Formation of SiOCl-containing layer on exposed low-k surfaces to reduce low-k damage
US8592327B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2012 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Jun 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for protecting an exposed low-k surface is described. The method includes receiving a substrate having a mask layer and a low-k layer formed thereon, wherein a pattern formed in the mask layer using a lithographic process has been transferred to the low-k layer using an etching process to form a structural feature therein. Additionally, the method includes forming a SiOCl-containing layer on exposed surfaces of the mask layer and the low-k layer, and anisotropically removing the SiOCl-containing layer from a top surface of the mask layer and a bottom surface of the structural feature in the low-k layer, while retaining a remaining portion of the SiOCl-containing layer on sidewall surfaces of the structural feature. The method further includes performing an ashing process to remove the mask layer, and thereafter, selectively removing the remaining portion of the SiOCl-containing layer from the sidewall surfaces of the structural feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.