Method for depositing a chlorine-free conformal sin film

US8592328B2 · kind B2 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Dennis M. Hausmann · Lake Oswego, US
• Jon Henri · West Linn, US
• Bart van Schravendijk · Sunnyvale, US
• Easwar Srinivasan · Beaverton, US

Key dates

• Filing date: Mar 7, 2012
• Grant date: Nov 26, 2013
• Expiry date: Apr 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/792
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.