Bart van Schravendijk
12Patents
11h-index
30Co-inventors
64Inventor score
Filing activity: Dec 9, 2010 → Feb 7, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8592328B2 | Method for depositing a chlorine-free conformal sin film | Electricity | 105 | Active |
| US8999859B2 | Plasma activated conformal dielectric film deposition | Electricity | 55 | Active |
| US8685867B1 | Premetal dielectric integration process | Electricity | 32 | Active |
| US8846536B2 | Flowable oxide film with tunable wet etch rate | Electricity | 31 | Active |
| US9070555B2 | Method for depositing a chlorine-free conformal sin film | Electricity | 29 | Active |
| US9570274B2 | Plasma activated conformal dielectric film deposition | Electricity | 29 | Active |
| US10043655B2 | Plasma activated conformal dielectric film deposition | Electricity | 23 | Active |
| US8728958B2 | Gap fill integration | Electricity | 22 | Active |
| US9447499B2 | Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery | Chemistry; Metallurgy | 17 | Active |
| US9670579B2 | Method for depositing a chlorine-free conformal SiN film | Electricity | 15 | Active |
| US9257302B1 | CVD flowable gap fill | Electricity | 13 | Active |
| US9299559B2 | Flowable oxide film with tunable wet etch rate | Electricity | 10 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.