Semiconductor devices with low leakage Schottky contacts
US8592878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2011 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Mar 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/602
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments include semiconductor devices with low leakage Schottky contacts. An embodiment is formed by providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the first mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.