Field effect transistor with source, heavy body region and shielded gate
US8592895B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2012 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Oct 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor includes a plurality of trenches extending into a semiconductor region of a first conductivity type. The plurality of trenches includes a plurality of gated trenches and a plurality of non-gated trenches. A body region of a second conductivity extends in the semiconductor region between adjacent trenches. A dielectric material fills a bottom portion of each of the gated and non-gated trenches. A gate electrode is disposed in each gated trench. A conductive material of the second conductivity type is disposed in each non-gated trench such that the conductive material and contacts corresponding body regions along sidewalls of the non-gated trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.