Patent · US Active

Method of fabricating a semiconductor device

US8603864B2 · kind B2 · utility

0Cited by

6References

5Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Edmund Riedl · Bergneustadt, DE
Ivan Nikitin · Regensburg, DE
Johannes Lodermeyer · Kinding, DE
Robert Bergmann · Regensburg, DE
Karsten Guth · Soest, DE

Key dates

Filing date	Sep 11, 2008
Grant date	Dec 10, 2013
Priority date	—
Expiry date	Mar 17, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/15747
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of fabricating a semiconductor device. One embodiment provides a metal carrier. A semiconductor chip is provided. A porous layer is produced at a surface of at least one of the carrier and the semiconductor chip. The semiconductor chip is placed on the carrier. The resulting structure is heated until the semiconductor chip is attached to the carrier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.