Methods of forming dielectric material-containing structures
US8603877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2012 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | May 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.