Methods for fabricating FinFET integrated circuits on bulk semiconductor substrates
US8603893B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2012 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | May 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for fabricating FinFET integrated circuits on bulk semiconductor substrates. In accordance with one embodiment a patterned hard mask that defines locations of a regular array of a plurality of fins is formed overlying a semiconductor substrate. Portions of the patterned hard mask are removed using a cut mask to form a modified hard mask. The substrate is etched using the modified hard mask as an etch mask to form a plurality of fins extending upwardly from the substrate and separated by trenches. Selected ones of the plurality of fins are at least partially removed to form isolation regions and an insulating material is deposited to fill the trenches and to cover the at least partially removed selected ones of the plurality of fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.