Method of forming silicon oxide containing films
US8613976B2 · kind B2 · utility
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17References
7Claims
0Family size
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Key dates
| Filing date | Jul 12, 2012 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Jul 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon oxide film, comprising the steps of:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.