Method of forming a semiconductor device by using sacrificial gate electrodes and sacrificial self-aligned contact structures

US8614123B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Andy Wei · Queensbury, US
• Peter Baars · Dresden, DE
• Erik Geiss · Wappingers Falls, US

Key dates

• Filing date: Nov 28, 2011
• Grant date: Dec 24, 2013
• Expiry date: Nov 28, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed herein are various methods of forming a semiconductor device using sacrificial gate electrodes and sacrificial self-aligned contacts. In one example, the method includes forming two spaced-apart sacrificial gate electrodes comprised of a first material, forming a sacrificial contact structure comprised of a second material, wherein the second material is selectively etchable with respect to said first material, and performing an etching process on the two spaced-apart sacrificial gate electrodes and the sacrificial contact structure to selectively remove the two spaced-apart sacrificial gate electrode structures selectively relative to the sacrificial contact structure.