Low 1C screw dislocation 3 inch silicon carbide wafer

US8624267B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Adrian Powell · Apex, US
• Mark Brady · Carrboro, US
• Stephan Mueller · Durham, US
• Valeri F. Tsvetkov · Durham, US
• Robert Tyler Leonard · Raleigh, US

Key dates

• Filing date: Feb 26, 2013
• Grant date: Jan 7, 2014
• Expiry date: Feb 26, 2033

Classification

• Technology area (CPC —): General

Abstract

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density from about 500 cm−2 to about 2000 cm−2.