Non-volatile electronic memory device with NAND structure being monolithically integrated on semiconductor
US8630115B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2011 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Aug 5, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile electronic memory device is integrated on a semiconductor and is of the Flash EEPROM type with a NAND architecture including at least one memory matrix divided into physical sectors, intended as smallest erasable units, and organized in rows or word lines and columns or bit lines of memory cells. At least one row or word line of a given physical sector is electrically connected to at least one row or word line of an adjacent physical sector to form a single logic sector being erasable, with the source terminals of the corresponding cells of the pair of connected rows referring to a same selection line of a source line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.