Luigi Pascucci
153Patents
19h-index
21Co-inventors
86Inventor score
Filing activity: Jun 28, 1989 → Dec 19, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6587913B2 | Interleaved memory device for burst type access in synchronous read mode with the two semi-arrays independently readable in random access asynchronous mode | Physics | 78 | Expired |
| US6701419B2 | Interlaced memory device with random or sequential access | Physics | 76 | Expired |
| US5889723A | Standby voltage boosting stage and method for a memory device | Electricity | 60 | Expired |
| US6552952B2 | Column multiplexer for semiconductor memories | Physics | 59 | Expired |
| US5559449A | Programmable logic array structure for semiconductor nonvolatile memories, particularly flash-eeproms | Electricity | 58 | Expired |
| US5663921A | Internal timing method and circuit for programmable memories | Physics | 56 | Expired |
| US7274594B2 | Non-volatile memory electronic device with NAND structure being monolithically integrated on semiconductor | Emerging Cross-Sectional Technologies | 51 | Expired |
| US5602786A | Method for programming redundancy registers in a column redundancy integrated circuitry for a semiconductor memory device, and column redundancy integrated circuitry | Physics | 34 | Expired |
| US5218570A | Sense circuit for reading data stored in nonvolatile memory cells | Physics | 34 | Expired |
| US5404334A | Anti-noise and auto-stand-by memory architecture | Physics | 29 | Expired |
| US5321317A | Zero-consumption power-on reset circuit | Electricity | 28 | Expired |
| US5461713A | Current offset sense amplifier of a modulated current or current unbalance type for programmable memories | Physics | 24 | Expired |
| US5650671A | Charge pump circuit | Physics | 24 | Expired |
| US4922402A | CMOS voltage multiplier | Electricity | 23 | Expired |
| USRE36579E | Sense circuit for reading data stored in nonvolatile memory cells | General | 23 | Expired |
| US5548554A | Integrated programming circuitry for an electrically programmable semiconductor memory device with redundancy | Physics | 20 | Expired |
| US5563826A | Memory array cell reading circuit with extra current branch | Physics | 20 | Expired |
| US5768115A | Voltage booster with an acceleration circuit | Physics | 20 | Expired |
| US5812467A | Redundancy memory register | Physics | 19 | Expired |
| US5854762A | Protection circuit for redundancy register set-up cells of electrically programmable non-volatile memory devices | Physics | 16 | Expired |
| US5097226A | Voltage-boosted phase oscillator for driving a voltage multiplier | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5708604A | Dynamic selection control in a memory | Physics | 15 | Expired |
| US5914901A | Integrated circuit for generating initialization signals for memory cell sensing circuits | Physics | 14 | Expired |
| US4933827A | Regulation of the output voltage of a voltage multiplier | Electricity | 14 | Expired |
| US5270590A | Sense circuit for storage devices such a non-volatile memories, with enhanced sensing discrimination | Physics | 14 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.