AlN inter-layers in III-N material grown on REO/silicon substrate
US8633569B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2013 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Jan 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
III-N material grown on a silicon substrate includes a single crystal rare earth oxide layer positioned on a silicon substrate. The rare earth oxide is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the rare earth oxide layer. An inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.