Optical device structure using GaN substrates for laser applications
US8634442B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2010 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Aug 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0254
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.