Oxygen engineered single-crystal REO template
US8636844B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2012 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Jul 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02521
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a template on a silicon substrate includes epitaxially growing a template of single crystal ternary rare earth oxide on a silicon substrate and epitaxially growing a single crystal semiconductor active layer on the template. The active layer has either a cubic or a hexagonal crystal structure. During the epitaxial growth of the template, a partial pressure of oxygen is selected and a ratio of metals included in the ternary rare earth oxide is selected to match crystal spacing and structure of the template at a lower interface to the substrate and to match crystal spacing and structure of the template at an upper interface to crystal spacing and structure of the semiconductor active layer. A high oxygen partial pressure during growth of the template produces a stabilized cubic crystal structure and a low oxygen partial pressure produces a predominant peak with a hexagonal crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.