Metal heterocyclic compounds for deposition of thin films
US8636845B2 · kind B2 · utility
4Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2009 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Jul 10, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.