Metal gate structures and methods for forming thereof
US8637390B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2011 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Jan 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.