Two-axis magnetic field sensor having reduced compensation angle for zero offset
US8647891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2013 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | Jun 4, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49117
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.