Method of patterning a low-K dielectric film
US8647990B2 · kind B2 · utility
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Key dates
| Filing date | Oct 16, 2012 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | Oct 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of patterning low-k dielectric films are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.