Trench power field effect transistor device and method
US8648412B1 · kind B1 · utility
5Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2012 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | Jun 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a structure for a trench power field effect transistor device with controlled, shallow, abrupt, body contact regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.