Patent · US Active

Fin-transistor formed on a patterned STI region by late fin etch

US8652889B2 · kind B2 · utility

7Cited by

0References

17Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Andy Wei · Queensbury, US
Peter Baars · Dresden, DE
Richard J. Carter · Los Altos, US
Frank Ludwig · Dresden, DE

Key dates

Filing date	Feb 14, 2012
Grant date	Feb 18, 2014
Priority date	—
Expiry date	Jun 15, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/307

Abstract

When forming sophisticated semiconductor devices, three-dimensional transistors in combination with planar transistors may be formed on the basis of a replacement gate approach and self-aligned contact elements by forming the semiconductor fins in an early manufacturing stage, i.e., upon forming shallow trench isolations, wherein the final electrically effective height of the semiconductor fins may be adjusted after the provision of self-aligned contact elements and during the replacement gate approach.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.