High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning

US8652956B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Sven Beyer · Dresden, DE
• Klaus Hempel · Dresden, DE
• Thilo Scheiper · Dresden, DE
• Stefanie Steiner · Hoyerswerda - Wojerecy, DE

Key dates

• Filing date: Jun 26, 2012
• Grant date: Feb 18, 2014
• Expiry date: Jun 26, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0177
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a replacement gate approach in sophisticated semiconductor devices, the placeholder material of gate electrode structures of different type are separately removed. Furthermore, electrode metal may be selectively formed in the resulting gate opening, thereby providing superior process conditions in adjusting a respective work function of gate electrode structures of different type. In one illustrative embodiment, the separate forming of gate openings in gate electrode structures of different type may be based on a mask material that is provided in a gate layer stack.