Method for UV based silylation chamber clean
US8657961B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2013 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Apr 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.