Semiconductor device stack and method for its production

US8659135B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Bauer · Nittendorf, DE
• Ulrich Bachmaier · Ruderting, DE
• Robert-Christian Hagen · Sarching, DE
• Jens Pohl · San Luis Obispo, US
• Rainer Steiner · Regensburg, DE
• Hermann Vllsmeler · Karlsfeld, DE
• Holger Woerner · Regensburg, DE
• Bernhard Zuhr · Regensburg, DE

Key dates

• Filing date: Jul 21, 2005
• Grant date: Feb 25, 2014
• Expiry date: May 3, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor stack and a semiconductor base device with a wiring substrate and an intermediate wiring board for a semiconductor device stack is disclosed. In one embodiment, a semiconductor chip is arranged between the intermediate wiring board and the wiring substrate, which is electrically connected by way of the wiring substrate on the one hand to external contacts on the underside of the wiring substrate and on the other hand to contact terminal areas in the edge regions of the wiring substrate. The intermediate wiring board has angled-away external flat conductors, which are electrically connected in the contact terminal areas of the wiring board. Furthermore, on the upper side of the intermediate wiring board, arranged on the free ends of the internal flat conductors are external contact terminal areas, which correspond in size and arrangement to external contacts of a semiconductor device to be stacked.