Semiconductor die singulation method
US8664089B1 · kind B1 · utility
16Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2012 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Aug 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and fluid machining the semiconductor wafer to remove the backmetal layer from the singulation lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.