IR sensor using REO up-conversion
US8664735B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2011 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Jan 6, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/52
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pumped sensor system includes a substrate with a first layer formed thereon and doped for a first type conduction and a second layer doped for a second type conduction, whereby the first and second layers form a silicon light detector at an up-conversion wavelength. A ternary rare earth oxide is formed on the second layer and crystal lattice matched to the second layer. The oxide is a crystalline bulk oxide with a controlled percentage of an up-conversion component and a majority component. The majority component is insensitive to any of pump, sense, or up-conversion wavelengths and the up-conversion component is selected to produce energy at the up-conversion wavelength in response to receiving energy at the pump and sense wavelengths. The layer of oxide defines a light input area sensitive to a pump wavelength and a light input area sensitive to a sense wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.