Reducing copper defects during a wet chemical cleaning of exposed copper surfaces in a metallization layer of a semiconductor device

US8673087B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Frank Feustel · Dresden, DE
• Tobias Letz · Dresden, DE
• Christin Bartsch · Neustadt in Sachsen, DE
• Andreas Ott · Erfurt, DE

Key dates

• Filing date: May 21, 2008
• Grant date: Mar 18, 2014
• Expiry date: Feb 3, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76843
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for treating a semiconductor device includes dissolving an inert gas species in a wet chemical cleaning solution and treating a material layer of a semiconductor device with the wet chemical cleaning solution in ambient atmosphere. The inert gas species is oversaturated in the wet chemical cleaning solution in the ambient atmosphere.