SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage

US8673696B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Peter Baars · Dresden, DE
• Frank Jakubowski · Dresden, DE
• Jens Heinrich · Radeberg, DE
• Marco Lepper · Dresden, DE
• Jana Schlott · Radeberg, DE
• Kai Frohberg · Meißen, DE

Key dates

• Filing date: Feb 15, 2012
• Grant date: Mar 18, 2014
• Expiry date: May 25, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/01

Abstract

When forming substrate diodes in SOI devices, superior diode characteristics may be preserved by providing an additional spacer element in the substrate opening and/or by using a superior contact patterning regime on the basis of a sacrificial fill material. In both cases, integrity of a metal silicide in the substrate diode may be preserved, thereby avoiding undue deviations from the desired ideal diode characteristics. In some illustrative embodiments, the superior diode characteristics may be achieved without requiring any additional lithography step.