Semiconductor process
US8674433B2 · kind B2 · utility
7Cited by
88References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2011 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Jan 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0275
Abstract
A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate. An oxide layer is formed on the substrate without the fin-shaped structure being formed thereon. A gate is formed to cover a part of the oxide layer and a part of the fin-shaped structure. An etching process is performed to etch a part of the fin-shaped structure beside the gate, therefore at least a recess is formed in the fin-shaped structure. An epitaxial process is performed to form an epitaxial layer in the recess, wherein the epitaxial layer has a hexagon-shaped profile structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.