Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate
US8679946B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for manufacturing a stacked structure comprising at least one thin layer bonded to a target substrate, in which a thin layer is formed by introduction gaseous species into an initial substrate, to form a weakened layer separating a film from the rest of the initial substrate, a first contact face of the thin layer is bonded to a face of an intermediate substrate by molecular adhesion, and the initial substrate is fractured at the weakened layer so as to expose a free face of the thin layer. The intermediate substrate is then removed in order to obtain the stacked structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.