Methods for forming doped silicon oxide thin films
US8679958B2 · kind B2 · utility
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26Claims
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Key dates
| Filing date | Nov 2, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Nov 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.