Ultra-thin ohmic contacts for p-type nitride light emitting devices

US8686460B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Mark Raffetto · Lompoc, US
• Jayesh Bharathan · Lompoc, US
• Kevin Haberern · Cary, US
• Michael John Bergmann · Atlanta, US
• David T. Emerson · Durham, US
• James Ibbetson · Lompoc, US
• Ting Li · Ventura, US

Key dates

• Filing date: Oct 12, 2011
• Grant date: Apr 1, 2014
• Expiry date: Oct 12, 2031

Classification

• Technology area (CPC —): General

Abstract

A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.