Structures, methods and applications for electrical pulse anneal processes

US8686508B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Michel J. Abou-Khalil · South Burlington, US
• Robert J. Gauthier, Jr. · South Burlington, US
• Tom C. Lee · South Burlington, US
• Junjun Li · Williston, US
• Souvick Mitra · South Burlington, US
• Christopher S. Putnam · South Burlington, US
• Robert R. Robison · Colchester, US

Key dates

• Filing date: Sep 3, 2009
• Grant date: Apr 1, 2014
• Expiry date: Nov 30, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/611
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a substrate and a P+ diffusion on the substrate. The P+ diffusion is in electrical contact with the N+ diffusion. The method further includes forming a device between the N+ diffusion and the P+ diffusion. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds.