High efficiency Group III nitride LED with lenticular surface
US8692267B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Jul 21, 2011 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Nov 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region, and extending to said light emitting region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.