Methods of plasma etching platinum-comprising materials, methods of processing semiconductor substrates in the fabrication of integrated circuitry, and methods of forming a plurality of memory cells
US8696922B2 · kind B2 · utility
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31Claims
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Key dates
| Filing date | Jun 22, 2009 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Aug 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A platinum-comprising material is plasma etched by being exposed to a plasma etching chemistry that includes CHCl3, CO2 and O2. In one embodiment, a method of processing a semiconductor substrate in the fabrication of integrated circuitry includes forming metallic platinum-comprising nanoparticles over a material. A portion of the nanoparticles is masked and another portion of the nanoparticles is unmasked. The unmasked portion of the metallic platinum-comprising nanoparticles is plasma etched using a plasma etching chemistry comprising CHCl3, CO2 and O2. Other embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.