Drain/source extension structure of a field effect transistor with reduced boron diffusion

US8697530B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ekkehard Pruefer · Dresden, DE
• Ralf van Bentum · Radebeul, DE
• Klaus Hempel · Dresden, DE
• Stephan Kruegel · Sankt Goar, DE

Key dates

• Filing date: Feb 13, 2007
• Grant date: Apr 15, 2014
• Expiry date: Oct 10, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/2251
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By modifying the dielectric liner for a spacer structure so as to exhibit an enhanced diffusion blocking characteristic, for instance by incorporating nitrogen, the out-diffusion of P-dopants, such as boron, into the dielectric material may be significantly reduced. Consequently, transistor performance, especially of P-type transistors, may be significantly enhanced while nevertheless a high degree of compatibility with conventional techniques may be maintained.