Method and system for controlling critical dimension and roughness in resist features
US8698109B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2013 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Jan 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3174
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A computer readable storage medium containing program instructions for treating a photoresist relief feature on a substrate having an initial line roughness and an initial critical dimension, that, when executed cause a system to: direct ions toward the photoresist relief feature in a first exposure at a first angular range and at a first ion dose rate configured to reduce the initial line roughness to a second line roughness; and direct ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first ion dose rate, the second ion dose rate being configured to swell the photoresist relief feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.