Nonvolatile memory device using a tunnel oxide as a current limiter element
US8698119B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 19, 2012 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Jan 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
Abstract
Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.