Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications
US8698260B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2012 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Jul 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3259
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.