Method for selective deposition of a semiconductor material
US8709918B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2012 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Apr 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02636
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selective deposition of semiconductor materials in semiconductor processing is disclosed. In some embodiments, the method includes providing a patterned substrate comprising a first region and a second region, where the first region comprises an exposed first semiconductor material and the second region comprise an exposed insulator material. The method further includes selectively providing a film of the second semiconductor material on the first semiconductor material of the first region by providing a precursor of a second semiconductor material, a carrier gas that is not reactive with chlorine compounds, and tin-tetrachloride (SnCl4). The tin-tetrachloride inhibits the deposition of the second semiconductor material on the insulator material of the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.