Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer

US8710490B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Ravi Pillarisetty · Portland, US
• Niti Goel · Portland, US
• Han Wui Then · Portland, US
• Van H. Le · Portland, US
• Willy Rachmady · Beaverton, US
• Marko Radosavljevic · Portland, US
• Gilbert Dewey · Beaverton, US
• Benjamin Chu-Kung · Portland, US

Key dates

• Filing date: Sep 27, 2012
• Grant date: Apr 29, 2014
• Expiry date: Sep 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/121
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers are described. For example, a semiconductor device includes a first buffer layer disposed above a substrate. A parasitic leakage barrier is disposed above the first buffer layer. A second buffer layer is disposed above the parasitic leakage barrier. A germanium active layer is disposed above the second buffer layer. A gate electrode stack is disposed above the germanium active layer. Source and drain regions are disposed above the parasitic leakage barrier, on either side of the gate electrode stack.