Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications
US8710603B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2012 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Feb 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
A magnetic element is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction (MTJ). The free layer may be a single layer or a composite and is comprised of one or more glassing agents that have a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. As a result, a CoFeB free layer, for example, selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.