Selective removal method and structure of silver in resistive switching device for a non-volatile memory device
US8716098B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2012 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Mar 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
Abstract
A method for forming a non-volatile memory device includes providing a substrate having a surface region, forming a first wiring structure overlying the surface region, depositing a first dielectric material overlying the first wiring structure, forming a via opening in the first dielectric material to expose a portion of the first wiring structure, while maintaining a portion of the first dielectric material, forming a layer of resistive switching material comprising silicon, within the via opening, forming a silver material overlying the layer of resistive switching material and the portion of the first dielectric material, forming a diffusion barrier layer overlying the silver material, and selectively removing a portion of the silver material and a portion of the diffusion barrier layer overlying the portion of the first dielectric material while maintaining a portion of the silver material and a portion of the diffusion barrier material overlying the layer of silicon material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.