High-k metal gate electrode structures formed by reducing a gate fill aspect ratio in replacement gate technology

US8716120B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Klaus Hempel · Dresden, DE
• Andy Wei · Queensbury, US
• Martin Mazur · Pulsnitz, DE

Key dates

• Filing date: Jun 6, 2012
• Grant date: May 6, 2014
• Expiry date: Jun 6, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0177

Abstract

When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, the fill conditions upon filling in the highly conductive electrode metal, such as aluminum, may be enhanced by removing an upper portion of the final work function metal, for instance a titanium nitride material in P-channel transistors. In some illustrative embodiments, the selective removal of the metal-containing electrode material in an upper portion of the gate opening may be accomplished without unduly increasing overall process complexity.