Methods of forming fins for a FinFET semiconductor device using a mandrel oxidation process
US8716156B1 · kind B1 · utility
44Cited by
2References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2013 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Feb 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
Abstract
One illustrative method disclosed herein includes forming a mandrel structure above a semiconductor substrate, performing an oxidation process to oxidize at least a portion of the mandrel structure so as to thereby define oxidized regions on the mandrel structure, removing the oxidized regions to thereby defined a reduced thickness mandrel structure, forming a plurality of fins on the reduced thickness mandrel structure and performing an etching process to selectively remove at least a portion of the reduced thickness mandrel structure so as to thereby expose at least a portion of each of the fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.