Method and system for forming patterns using charged particle beam lithography
US8719739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2013 |
| Grant date | May 6, 2014 |
| Priority date | — |
| Expiry date | Apr 15, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/39
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for mask data preparation (MDP) is disclosed, in which a set of shots is determined that will form a pattern on a reticle, where the determination includes calculating the pattern that will be formed on a substrate using an optical lithographic process with a reticle formed using the set of shots. A method for optical proximity correction (OPC) or MDP is also disclosed, in which a preliminary set of charged particle beam shots is generated using a preliminary mask model, and then the shots are modified by calculating both a reticle pattern using a final mask model, and a resulting substrate pattern. A method for OPC is also disclosed, in which an ideal pattern for a photomask is calculated from a desired substrate pattern, where the model used in the calculation includes only optical lithography effects and/or substrate processing effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.