Self-aligned fin transistor formed on a bulk substrate by late fin etch

US8722498B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Thilo Scheiper · Dresden, DE
• Andy Wei · Queensbury, US

Key dates

• Filing date: Aug 12, 2011
• Grant date: May 13, 2014
• Expiry date: Aug 13, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

Non-planar transistors, such as FinFETs, may be formed in a bulk configuration in the context of a replacement gate approach, wherein the semiconductor fins are formed during the replacement gate sequence. To this end, in some illustrative embodiments, a buried etch mask may be formed in an early manufacturing stage on the basis of superior process conditions.