Patent · US Active

Method of producing insulation trenches in a semiconductor on insulator substrate

US8735259B2 · kind B2 · utility

0Cited by

1References

7Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Yannick Le Tiec · Crolles, FR
Laurent Grenouillet · Voiron, FR
Maud Vinet · Voiron, FR

Key dates

Filing date	Jul 23, 2012
Grant date	May 27, 2014
Priority date	—
Expiry date	Jul 23, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76283
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing one or plural trenches in a device comprising a substrate of the semiconductor on insulator type formed by a semiconductive support layer, an insulating layer resting on the support layer and a semiconductive layer resting on said insulating layer, the method comprising steps of: a) localised doping of a given portion of said insulating layer through an opening in a masking layer resting on the fine semiconductive layer, b) selective removal of said given doped area at the bottom of said opening.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.