Method for forming semiconductor structure having TiN layer
US8735269B1 · kind B1 · utility
3Cited by
57References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 15, 2013 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Jan 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method for forming a semiconductor structure includes first providing a substrate. Then, a TiN layer is formed on the substrate at a rate between 0.3 and 0.8 angstrom/second. Finally, a poly-silicon layer is formed directly on the TiN layer. Since the TiN in the barrier layer is formed at a low rate so as to obtain a good quality, the defects in the TiN layer or the defects on the above layer, such as gate dummy layer or gate cap layer, can be avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.